QUE PEUT-ON ATTENDRE DES DISPOSITIFS A SEMICONDUCTEURS ACTUELS.NISHIZAWA J.1975; OYO BUTURI; JAP.; DA. 1975; VOL. 44; NO 9; PP. 1017-1021; BIBL. 13 REF.Article

APPAREILLAGE POUR LA FABRICATION DE MONOCRISTAUX SEMICONDUCTEURSNISHIZAWA J.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 3; PP. 220-229; ABS. ANGL.; BIBL. 27 REF.Article

SIT HAS GREAT UNTAPPED POTENTIALNISHIZAWA J.1980; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1980; VOL. 17; NO 166; PP. 64-67Article

FUTURE TREND OF STATIC INDUCTION TRANSITOR AND ITS APPLICATION FOR INTEGRATED CIRCUITS.NISHIZAWA J.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 157-162; BIBL. 13 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

DIODE TUNNELNISHIZAWA J.1975; OYO BUTURI; JAP.; DA. 1975; VOL. 44; NO 7; PP. 821-825; BIBL. 15 REF.Article

GROWTH MECHANISM OF CHEMICAL VAPOR DEPOSITION OF SILICONNISHIZAWA J; SAITO M.1981; INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION. 8/1981/GOUVIEUX; USA; PENNINGTON NJ: THE ELECTROCHEMICAL SOCIETY; DA. 1981; PP. 317-328; BIBL. 13 REF.Conference Paper

Stoichiometry control for growth of III-V crystalsNISHIZAWA, J.Journal of crystal growth. 1990, Vol 99, Num 1-4, pp 1-8, issn 0022-0248, 1Conference Paper

STATIC INDUCTION LOGIC-A SIMPLE STRUCTURE WITH VERY LOW SWITCHING ENERGY AND VERY HIGH PACKING DENSITY.NISHIZAWA J; WILAMOWSKI BM.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 151-154; BIBL. 5 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

AVALANCHE INDUCED DISPERSION IN IMPATT DIODESNISHIZAWA J; OHMI T; NIRANJIAN MS et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 847-858; BIBL. 9 REF.Article

DIELECTRIC EFFECTS IN THE OPTICALLY STIMULATED ELECTRON SPIN RESONANCE IN SILICON.SHIOTA I; MIYAMOTO N; NISHIZAWA J et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2556-2558; BIBL. 8 REF.Article

MINORITY-CARRIER LIFETIME MEASUREMENTS OF EFFICIENT GAALAS P-N HETEROJUNCTIONS.NISHIZAWA J; SUTO K; TESHIMA T et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3484-3495; BIBL. 13 REF.Article

CARACTERISTIQUES DES MASSES D'EAU DANS LES TOURBILLONS CHAUDS SITUES AU SUD DE HONSHU, JAPONMINAMI H; KAMIHIRA E; NISHIZAWA J et al.1981; UMI SORA; ISSN 0503-1567; JPN; DA. 1981; VOL. 57; NO 1; PP. 1-18; ABS. ENG; BIBL. 14 REF.Article

OBSERVATIONS OF DEFECTS IN LPE GAAS REVEALED BY NEW CHEMICAL ETCHANTNISHIZAWA J; OYAMA Y; TADANO H et al.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 3; PP. 434-436; BIBL. 6 REF.Article

ABNORMAL IMPURITY DISTRIBUTIONS IN HIGH-PURITY EPITAXIAL SILICON LAYERS.NIHIRA H; SHIRASU T; TERASAKI T et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 781-786; BIBL. 16 REF.Article

LUMINESCENCE STUDY OF A DEEP LEVEL IN N-FREE GAP LIGHT EMITTING DIODESNISHIZAWA J; SIN CC; SUTO K et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5876-5881; BIBL. 14 REF.Article

ELECTRONS AND HOLES IN HGTE AND HG⁰,82) CD⁰,18) TE WITH CONTROLLED DEVIATIONS FROM STOICHIOMETRY.NISHIZAWA J; SUTO K; KITAMURA M et al.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 1; PP. 33-42; BIBL. 29 REF.Article

DEFECT-FREE NUCLEATION OF SILICON ON (111) SILICON SURFACES.SHIMBO M; NISHIZAWA J; TERASAKI T et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 4; PP. 267-274; BIBL. 5 REF.Article

PROPERTIES OF SN-DOPED GAASNISHIZAWA J; SHINOZAKI S; ISHIDA K et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 4; PP. 1638-1645; BIBL. 40 REF.Serial Issue

EFFICIENCY OF GAALAS HETEROSTRUCTURE RED LIGHT-EMITTING DIODESNISHIZAWA J; KOIKE M; JIN CC et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2807-2812; BIBL. 12 REF.Article

IMPEDANCE CHARACTERISTICS OF DOUBLE-HETERO STRUCTURE LASER DIODESMORISHITA M; OHMI T; NISHIZAWA J et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 951-962; BIBL. 37 REF.Article

THE SCREW AND CIRCULAR STRUCTURES OF SI AND GAAS EPITAXIAL LAYERSNISHIZAWA J; TADANO H; OYAMA Y et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 2; PP. 402-405; BIBL. 6 REF.Article

PRECISE POSITION CONTROL BY ELECTROMAGNET. = CONTROLE DE POSITION PRECIS UTILISANT UN ELECTROAIMANTNISHIZAWA J; TAKAHASHI K; ICHINOSE W et al.1975; BULL. J.S.M.E.; JAP.; DA. 1975; VOL. 18; NO 122; PP. 819-825; BIBL. 3 REF.Article

Characteristics of the epitaxial semiconductor Raman laserSUTO, K; NISHIZAWA, J.IEE proceedings. Part J. Optoelectronics. 1986, Vol 133, Num 4, pp 259-263, issn 0267-3932Article

On the reaction mechanism of GaAs MOCVDNISHIZAWA, J; KURABAYASHI, T.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 413-417, issn 0013-4651Article

Low-threshold semiconductor Raman laserSUTO, K; NISHIZAWA, J.IEEE journal of quantum electronics. 1983, Vol 19, Num 8, pp 1251-1254, issn 0018-9197Article